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SEMICONDUCTOR
TECHNICAL DATA
TIP117
EPITAXIAL PLANAR PNP TRANSISTOR
MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
FEATURES ᴌHigh DC Current Gain.
: hFE=1000(Min.), ᷤVCE=-4V, IC=-1A. ᴌLow Collector-Emitter Saturation Voltage. ᴌComplementary to TIP112.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Pulse
Base Current
DC
VCBO VCEO VEBO
IC ICP IB
Collector Power Dissipation
Ta=25ᴱ Tc=25ᴱ
Junction Temperature
PC Tj
Storage Temperature Range
Tstg
RATING -100 -100 -5 -2 -4 -50 2 50 150
-65ᴕ150
UNIT V V V
A
mA
W
ᴱ ᴱ
E Q
H
A R S
F B
D
T
L CC
MM K
123 J
1. BASE 2. COLLECTOR (HEAT SINK) 3.
TIP117 Datasheet
