TIP117 Description
Production specification PNP Epitaxial Silicon Darlington Transistor TIP117.
TIP117 Key Features
- Monolithic Construction With Built in Base -Emitter Shunt Resistors
- plementary to TIP112
- High DC Current Gain:hFE=1000@VCE=-4V,IC=-1A
- Low Collector-Emitter Saturation Voltage
- Industrial Use
- 65 to +150 ℃