Part TIP117
Description PNP Epitaxial Silicon Darlington Transistor
Category Transistor
Manufacturer Galaxy Microelectronics
Size 195.69 KB
Galaxy Microelectronics

TIP117 Overview

Key Features

  • Complementary to TIP112
  • High DC Current Gain:hFE=1000@VCE=-4V,IC=-1A
  • Low Collector-Emitter Saturation Voltage
  • 50 mA 2 W 50
  • 65 to +150 ℃ X021 Rev.A 1 Production specification PNP Epitaxial Silicon Darlington Transistor TIP117