Datasheet4U Logo Datasheet4U.com

TIP117 - PNP Epitaxial Silicon Darlington Transistor

Key Features

  • Monolithic Construction With Built in Base -Emitter Shunt Resistors. Pb Lead-free.
  • Complementary to TIP112.
  • High DC Current Gain:hFE=1000@VCE=-4V,IC=-1A.
  • Low Collector-Emitter Saturation Voltage.
  • Industrial Use. TO-220AB.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TIP117 EPITAXIAL PLANAR PNP TRANSISTOR KEC
TIP117 PNP Epitaxial Silicon Darlington Transistors MCC
TIP117 Power Transistors RECTRON
TIP117 PNP Transistor INCHANGE
TIP117 PNP Epitaxial Silicon Darlington Transistor Fairchild Semiconductor

Other Datasheets by Galaxy Microelectronics

Part Number Description
TIP112 NPN Epitaxial Silicon Darlington Transistor
TIP122 NPN Epitaxial Silicon Darlington Transistor
TIP127 PNP Epitaxial Silicon Darlington Transistor
TIP31 Epitaxial Planar NPN Transistor
TIP31A Epitaxial Planar NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Production specification PNP Epitaxial Silicon Darlington Transistor TIP117 FEATURES  Monolithic Construction With Built in Base -Emitter Shunt Resistors. Pb Lead-free  Complementary to TIP112.  High DC Current Gain:hFE=1000@VCE=-4V,IC=-1A.  Low Collector-Emitter Saturation Voltage.  Industrial Use. TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -100 V VCEO VEBO IC IB PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Crrent Collector Dissipation Junction and Storage Temperature Ta=25℃ Tc=25℃ -100 V -5 V -2 A -4 -50 mA 2 W 50 -65 to +150 ℃ X021 Rev.A www.gmesemi.