TIP117 Datasheet | Galaxy Microelectronics

Production specification PNP Epitaxial Silicon Darlington Transistor Features - Monolithic Construction With Built in Base -Emitter Shunt Resistors. Pb Lead-free - plementary to TIP112. - High DC Current Gain:h FE=1000@VCE=-4V,IC=-1A. - Low Collector-Emitter Saturation Voltage. - Industrial Use. TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -100 VCEO VEBO IC IB PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Crrent Collector Dissipation Junction and Storage Temperature Ta=25℃ Tc=25℃ -100 -5 V -2...