Datasheet Summary
TIP115 / TIP117
- PNP Epitaxial Silicon Darlington Transistor
November 2014
TIP115 / TIP117 PNP Epitaxial Silicon Darlington Transistor
Features
- Monolithic Construction with Built-in Base-Emitter Shunt Resistors
- High DC Current Gain: hFE = 1000 @ VCE = -4 V, IC = -1 A (Minimum)
- Low Collector-Emitter Saturation Voltage
- Industrial Use
- plementary to TIP110 / TIP111 / TIP112
Equivalent Circuit C
1 TO-220 1.Base 2.Collector 3.Emitter
R1
≅Ω ≅Ω
R2 E
Ordering Information
Part Number TIP115
TIP117TU
Top Mark TIP115 TIP117
Package TO-220 3L (Single Gauge) TO-220 3L (Single Gauge)
Packing Method Bulk...
