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TIP117 - PNP Epitaxial Silicon Darlington Transistor

Key Features

  • Monolithic Construction with Built-in Base-Emitter Shunt Resistors.
  • High DC Current Gain: hFE = 1000 @ VCE = -4 V, IC = -1 A (Minimum).
  • Low Collector-Emitter Saturation Voltage.
  • Industrial Use.
  • Complementary to TIP110 / TIP111 / TIP112 Equivalent Circuit C B 1 TO-220 1.Base 2.Collector 3.Emitter R1 ≅Ω ≅Ω R2 E Ordering Information Part Number TIP115 TIP117TU Top Mark TIP115 TIP117 Package TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) Pack.

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
TIP110 NPN Epitaxial Silicon Darlington Transistor
TIP111 NPN Epitaxial Silicon Darlington Transistor
TIP112 NPN Epitaxial Silicon Darlington Transistor
TIP115 PNP Epitaxial Silicon Darlington Transistor
TIP116 PNP Epitaxial Silicon Darlington Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TIP115 / TIP117 — PNP Epitaxial Silicon Darlington Transistor November 2014 TIP115 / TIP117 PNP Epitaxial Silicon Darlington Transistor Features • Monolithic Construction with Built-in Base-Emitter Shunt Resistors • High DC Current Gain: hFE = 1000 @ VCE = -4 V, IC = -1 A (Minimum) • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP110 / TIP111 / TIP112 Equivalent Circuit C B 1 TO-220 1.Base 2.Collector 3.Emitter R1 ≅Ω ≅Ω R2 E Ordering Information Part Number TIP115 TIP117TU Top Mark TIP115 TIP117 Package TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) Packing Method Bulk Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device.