TIP117 Description
TIP115 / TIP117 PNP Epitaxial Silicon Darlington Transistor November 2014 TIP115 / TIP117 PNP Epitaxial Silicon Darlington Transistor.
TIP117 Key Features
- Monolithic Construction with Built-in Base-Emitter Shunt Resistors
- High DC Current Gain: hFE = 1000 @ VCE = -4 V, IC = -1 A (Minimum)
- Low Collector-Emitter Saturation Voltage
- Industrial Use
- plementary to TIP110 / TIP111 / TIP112