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TIP112 - NPN Epitaxial Silicon Darlington Transistor

Key Features

  • Monolithic Construction with Built-in Base-Emitter Shunt Resistors.
  • Complementary to TIP115 / TIP116 / TIP117.
  • High DC Current Gain: hFE = 1000 @ VCE = 4 V, IC = 1 A (Minimum).
  • Low Collector-Emitter Saturation Voltage.
  • Industrial Use Ordering Information Equivalent Circuit C B 1 TO-220 1.Base 2.Collector 3.Emitter R1 ≅Ω ≅Ω R2 E Part Number TIP110 TIP110TU TIP111TU TIP112 TIP112TU Top Mark TIP110 TIP110 TIP111 TIP112 TIP112 Package TO-220 3L (.

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
TIP110 NPN Epitaxial Silicon Darlington Transistor
TIP111 NPN Epitaxial Silicon Darlington Transistor
TIP115 PNP Epitaxial Silicon Darlington Transistor
TIP116 PNP Epitaxial Silicon Darlington Transistor
TIP117 PNP Epitaxial Silicon Darlington Transistor

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TIP110 / TIP111 / TIP112 — NPN Epitaxial Silicon Darlington Transistor November 2014 TIP110 / TIP111 / TIP112 NPN Epitaxial Silicon Darlington Transistor Features • Monolithic Construction with Built-in Base-Emitter Shunt Resistors • Complementary to TIP115 / TIP116 / TIP117 • High DC Current Gain: hFE = 1000 @ VCE = 4 V, IC = 1 A (Minimum) • Low Collector-Emitter Saturation Voltage • Industrial Use Ordering Information Equivalent Circuit C B 1 TO-220 1.Base 2.Collector 3.