| Part Number | TIP112 |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
TIP110 / TIP111 / TIP112 — NPN Epitaxial Silicon Darlington Transistor
November 2014
TIP110 / TIP111 / TIP112 NPN Epitaxial Silicon Darlington Transistor
Features
• Monolithic Construction with Bui.
* Monolithic Construction with Built-in Base-Emitter Shunt Resistors * Complementary to TIP115 / TIP116 / TIP117 * High DC Current Gain: hFE = 1000 @ VCE = 4 V, IC = 1 A (Minimum) * Low Collector-Emitter Saturation Voltage * Industrial Use Ordering Information Equivalent Circuit C B 1 TO-220 1.Ba. |
TIP112 Datasheet
The TIP112 is a NPN Epitaxial Silicon Darlington Transistor.
| Part Number | TIP112 |
|---|---|
| Description | EPITAXIAL PLANAR NPN TRANSISTOR |
| Manufacturer | KEC |
| Overview | SEMICONDUCTOR TECHNICAL DATA MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A. Low Collector-Emitter Sa. High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A. Low Collector-Emitter Saturation Voltage. Complementary to TIP117. TIP112 EPITAXIAL PLANAR NPN TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collecto. |
| Part Number | TIP112 |
|---|---|
| Description | Silicon Power darlington Complementary transistors |
| Manufacturer | Central Semiconductor |
| Overview | 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 w. . |
| Part Number | TIP112 |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·High DC Current Gain- : hFE = 1000(Min)@ IC= 1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.5V(Max)@ IC= 2A ·Complement to. 5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor TIP112 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT . |