TIP112 Description
UTC TIP112 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR.
TIP112 Key Features
- High DC Current Gain : hFE = 1000 @VCE=4V, Ic=1A (Min)
- Low Collector-Emitter Saturation Voltage
- Industrial Use
- Part: TIP112
- Manufacturer: Unisonic Technologies (official site)
- Size: 128.62 KB
Equivalent or Similar Parts
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
TIP112 | NPN Transistor |
Rectron |
TIP112 | Power Transistors |
Micro Commercial Components |
TIP112 | Silicon NPN Darlington Power Transistor |
Fairchild |
TIP112 | NPN Epitaxial Silicon Darlington Transistor |
STMicroelectronics |
TIP112 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |