TIP112
Overview
- High DC Current Gain : hFE = 1000 @VCE=4V, Ic=1A (Min) * Low Collector-Emitter Saturation Voltage * Industrial Use
| Part | TIP112 |
|---|---|
| Description | NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR |
| Category | Transistor |
| Manufacturer | Unisonic Technologies |
| Size | 128.62 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| TIP112 | Fairchild Semiconductor | NPN Epitaxial Silicon Darlington Transistor |
| TIP112 | KEC | EPITAXIAL PLANAR NPN TRANSISTOR |
| TIP112 | Central Semiconductor | Silicon Power darlington Complementary transistors |
| TIP112 | Inchange Semiconductor | NPN Transistor |
| TIP112 | onsemi | Silicon NPN Transistor |