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TIP112 - NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR

Key Features

  • High DC Current Gain : hFE = 1000 @VCE=4V, Ic=1A (Min).
  • Low Collector-Emitter Saturation Voltage.
  • Industrial Use.

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UTC TIP112 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR FEATURES * High DC Current Gain : hFE = 1000 @VCE=4V, Ic=1A (Min) * Low Collector-Emitter Saturation Voltage * Industrial Use EQUIVALENT TEST (R1≅10kΩ, R2≅0.6Ω) B C E TO-220 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (Ta=25°C) Collector Dissipation (Tc=25°C) Junction Temperature Storage Temperature SYMBOL VCBO www.DataSheet4U.