Unisonic Technologies TIP112
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
TIP112 Specifications
- Package : TO-220-3
- Mount Type : Through Hole
- Polarity : NPN
- Current Rating : 2A
- Terminals : 3
- Collector Base Voltage : 100V
- Emitter Base Voltage : 5V
- Collector Emitter Saturation Voltage : 2.5V
- Max Power Dissipation : 50W
- Max Operating Temp : 150°C
- Min Operating Temp : -65°C
Source:
Octopart
| Part No. | TIP112 |
|---|---|
| Datasheet | TIP112 Download |
| Manufacturer |  Unisonic Technologies |
| Description | NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR |
| Buy | Stock & Price |
FEATURES
* High DC Current Gain : hFE = 1000 @VCE=4V, Ic=1A (Min) * Low Collector-Emitter Saturation Voltage * Industrial Use EQUIVALENT TEST (R1≅10kΩ, R2≅0.6Ω) B C E TO-220ABSOLUTE MAXIMUM RATINGS
(Ta=25°C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (Ta=25°C) Collector Dissipation (Tc=25°C) Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Ic Icp IB Pc Pc Tj TSTG VALUE 100 100 5 2 4 50 2 50 150 -65 ~ +150 UNIT V V V A A mA W W °C °CELECTRICAL CHARACTERISTICS
(Ta=25°C) PARAMETER Collector-Emitter Breakdown Voltage Collector Cut-Off Current Collector-Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output capacitance SYMBOL VCEO(SUS) ICBO ICEO IEBO hFE VCE(sat) VBE(on) Cob TEST CONDITIONS IC=30mA, IB=0 VCB=100V, IE=0 VCE=50V, IB=0 VBE=5V, IC=0 IC=1A, VCE=4V IC=2A, VCE=4V IC=2A, IB=8mA VCE=4V, IC=2A VCB=10V, IE=0, f=0.1MHz MIN.
