TIP112
Overview
SEMICONDUCTOR TECHNICAL DATA MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A. Low Collector-Emitter Sa...
| Part | TIP112 |
|---|---|
| Description | EPITAXIAL PLANAR NPN TRANSISTOR |
| Category | Transistor |
| Manufacturer | KEC |
| Size | 648.73 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| TIP112 | Fairchild Semiconductor | NPN Epitaxial Silicon Darlington Transistor |
| TIP112 | Central Semiconductor | Silicon Power darlington Complementary transistors |
| TIP112 | Inchange Semiconductor | NPN Transistor |
| TIP112 | onsemi | Silicon NPN Transistor |
| TIP112 | STMicroelectronics | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |