TIP112 Datasheet PDF

FEATURES

High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A. Low Collector-Emitter Saturation Voltage. Complementary to TIP117. TIP112 EPITAXIAL PLANAR NPN TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current DC VCBO VCEO VEBO IC ICP IB 100 100 5 2 4 50 Collector Power Ta=25 2 PC Dissipation Tc=25 50 Junction Temperature Tj 150 Storage Temperature Range Tstg -65 150 UNIT V V V A mA W EQUIVALENT CIRCUIT

ELECTRICAL CHARACTERISTICS

(Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current ICEO ICBO Emitter Cut-off Current IEBO DC Current Gain hFE Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Output Capacitance VCEO(SUS) VCE(sat) VBE(ON) Cob TEST CONDITION VCE=