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TIP112 - EPITAXIAL PLANAR NPN TRANSISTOR

Key Features

  • High DC Current Gain. : hFE=1000(Min. ), VCE=4V, IC=1A. Low Collector-Emitter Saturation Voltage. Complementary to TIP117. TIP112.

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Datasheet Details

Part number TIP112
Manufacturer KEC
File Size 648.73 KB
Description EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet download datasheet TIP112 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A. Low Collector-Emitter Saturation Voltage. Complementary to TIP117.