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SEMICONDUCTOR
TECHNICAL DATA
TIP117F
EPITAXIAL PLANAR PNP TRANSISTOR
MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
FEATURES High DC Current Gain. : hFE=1000(Min.), VCE=-4V, IC=-1A. Low Collector-Emitter Saturation Voltage. Complementary to TIP112F.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Pulse
Base Current
DC
VCBO VCEO VEBO
IC ICP IB
Collector Power Dissipation
Ta=25 Tc=25
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING -100 -100 -5 -2 -4 -50 2 20 150
-65 150
UNIT V V V
A
mA
W
O Q
A U
E
K
LL
M DD
NN T
T
123
G B
J
F P
C
DIM MILLIMETERS
A 10.30 MAX
B 15.30 MAX
C 2.70Ź0.30 S D 0.85 MAX
E Φ3.20Ź0.20
F 3.
TIP117F Datasheet
