Datasheet Summary
isc Silicon PNP Darlington Power Transistor
DESCRIPTION
- High DC Current Gain-
: hFE = 1000(Min)@ IC= -1A
- Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -100V(Min)
- Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -2.5V(Max)@ IC= -2A
- plement to Type TIP112
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for general purpose amplifier and low speed switching...
