Datasheet Summary
SEMICONDUCTOR
TECHNICAL DATA
EPITAXIAL PLANAR PNP TRANSISTOR
MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
Features
ᴌHigh DC Current Gain.
: hFE=1000(Min.), ᷤVCE=-4V, IC=-1A. ᴌLow Collector-Emitter Saturation Voltage. ᴌplementary to TIP112.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Pulse
Base Current
VCBO VCEO VEBO
IC ICP IB
Collector Power Dissipation
Ta=25ᴱ Tc=25ᴱ
Junction Temperature
PC Tj
Storage Temperature Range
Tstg
RATING -100 -100 -5 -2 -4 -50 2 50 150
-65ᴕ150
UNIT V V V
A mA
ᴱ ᴱ
L...
