Datasheet Details
| Part number | TIP112 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.16 KB |
| Description | NPN Transistor |
| Datasheet | TIP112-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor TIP112.
| Part number | TIP112 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.16 KB |
| Description | NPN Transistor |
| Datasheet | TIP112-INCHANGE.pdf |
|
|
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·High DC Current Gain- : hFE = 1000(Min)@ IC= 1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.5V(Max)@ IC= 2A ·Complement to Type TIP117 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 4 A IB Base Current Collector Power Dissipation PC TC=25℃ Collector Power Dissipation Ta=25℃ Tj Junction Temperature 50 mA 50 W 2 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor TIP112 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A, IB= 8mA 2.5 V VBE(on) Base-Emitter On Voltage IC= 2A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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TIP112 | Power Transistors | RECTRON |
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TIP112 | Silicon NPN Darlington Power Transistor | MCC |
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TIP112 | NPN Epitaxial Silicon Darlington Transistor | Fairchild Semiconductor |
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TIP112 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | STMicroelectronics |
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TIP112 | DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS | Motorola |
| Part Number | Description |
|---|---|
| TIP110 | NPN Transistor |
| TIP111 | NPN Transistor |
| TIP115 | PNP Transistor |
| TIP116 | PNP Transistor |
| TIP117 | PNP Transistor |
| TIP100 | NPN Transistor |
| TIP101 | NPN Transistor |
| TIP102 | NPN Transistor |
| TIP105 | PNP Transistor |
| TIP106 | PNP Transistor |