Comset Semiconductors TIP112
Silicon NPN Darlington Power Transistors
| Part No. | TIP112 |
|---|---|
| Datasheet | TIP112 Download |
| Manufacturer |  Comset Semiconductors |
| Description | Silicon NPN Darlington Power Transistors |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
Symbol VCBO Collector-Base Voltage Ratings TIP110 TIP111 TIP112 TIP110 TIP111 TIP112 TIP110 TIP111 TIP112 TIP110 TIP111 TIP112 TIP110 TIP111 TIP112 TIP110 TIP111 TIP112 TIP110 TIP111 TIP112 TIP110 TIP111 TIP112 TIP110 TIP111 TIP112 TIP110 TIP111 TIP112 Value 60 80 100 60 80 100 5 Unit V VCEO Collector-Emitter Voltage V VEBO Emitter-Base Voltage V IC Collector Current 2 A ICM Collector Peak Current 4 A IB Base Current 50 mA @ Tc < 25° PT Power Dissipation @ Ta < 25° 50 Watts 2 TJ Junction Temperature 150 °C -65 to +150 Ts Storage Temperature range 05/10/2012 COMSET SEMICONDUCTORS 1 |3 datasheet pdf - SEMICONDUCTORS NPN TIP110-111-112 THERMAL CHARACTERISTICS Symbol RthJ-case From junction-case Ratings TIP110 TIP111 TIP112 TIP110 TIP111 TIP112 Value 2.5 Unit °C/W RthJ-amb From junction-ambient 62.5 °C/WELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol ICBO Ratings Collector Cutoff Current Test Condition(s) IE= 0,VCB = VCBOmax Min - Typ - Max 1 Unit...
