Datasheet4U Logo Datasheet4U.com

TIP115 - PNP Epitaxial Silicon Darlington Transistor

Key Features

  • Monolithic Construction with Built-in Base-Emitter Shunt Resistors.
  • High DC Current Gain: hFE = 1000 @ VCE = -4 V, IC = -1 A (Minimum).
  • Low Collector-Emitter Saturation Voltage.
  • Industrial Use.
  • Complementary to TIP110 / TIP111 / TIP112 Equivalent Circuit C B 1 TO-220 1.Base 2.Collector 3.Emitter R1 ≅Ω ≅Ω R2 E Ordering Information Part Number TIP115 TIP117TU Top Mark TIP115 TIP117 Package TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) Pack.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TIP115 PNP Transistor INCHANGE
TIP115 PNP Epitaxial Silicon Darlington Transistors MCC
TIP115 Power Transistors RECTRON
TIP115 PNP SILICON POWER DARLINGTONS Power Innovations Limited
TIP115 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics

Other Datasheets by Fairchild (now onsemi)

Part Number Description
TIP110 NPN Epitaxial Silicon Darlington Transistor
TIP111 NPN Epitaxial Silicon Darlington Transistor
TIP112 NPN Epitaxial Silicon Darlington Transistor
TIP116 PNP Epitaxial Silicon Darlington Transistor
TIP117 PNP Epitaxial Silicon Darlington Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TIP115 / TIP117 — PNP Epitaxial Silicon Darlington Transistor November 2014 TIP115 / TIP117 PNP Epitaxial Silicon Darlington Transistor Features • Monolithic Construction with Built-in Base-Emitter Shunt Resistors • High DC Current Gain: hFE = 1000 @ VCE = -4 V, IC = -1 A (Minimum) • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP110 / TIP111 / TIP112 Equivalent Circuit C B 1 TO-220 1.Base 2.Collector 3.Emitter R1 ≅Ω ≅Ω R2 E Ordering Information Part Number TIP115 TIP117TU Top Mark TIP115 TIP117 Package TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) Packing Method Bulk Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device.