Micro Commercial Components TIP115
PNP Epitaxial Silicon Darlington Transistors
FEATURES
● High DC Current Gain : hFE=1000 @ VCE=4.0V, IC=1.0A(Min.)● Low Collector-Emitter Saturation Voltage
● Complementary to TIP110/111/112
● Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information)
● Epoxy meets UL 94 V-0 flammability rating
●MaMxiomisuurme SReantsiitnivgitsy Level 1 Symbol Rating VCEO Collector-Emitter Voltage TIP115 TIP116 TIP117 Rating 60 80 100 Unit V VCBO Collector-Base Voltage TIP115 TIP116 TIP117 60 80 100 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current (DC) 2.0 A ICP Collector Current (Pulse) 4.0 A IB Base Current (DC) 50 mA PC Collector Dissipation @TA=25OC Collector Dissipation @TC=25OC 2.0 W 50 W TJ, TSTG Junction Temperature Storage Temperature -55 to +150 -55 to +150 OC OC
ELECTRICAL CHARACTERISTICS
@ 25OC