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TIP115 - PNP Epitaxial Silicon Darlington Transistors

Key Features

  • High DC Current Gain : hFE=1000 @ VCE=4.0V, IC=1.0A(Min. ).
  • Low Collector-Emitter Saturation Voltage.
  • Complementary to TIP110/111/112.
  • Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information).
  • Epoxy meets UL 94 V-0 flammability rating.
  • MaMxiomisuurme SReantsiitnivgitsy Level 1 Symbol Rating VCEO Collector-Emitter Voltage TIP115 TIP116 TIP117 Rating 60 80 100 Unit V VCBO Collector-Base Volt.

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Other Datasheets by Micro Commercial Components

Part Number Description
TIP110 Silicon NPN Darlington Power Transistor
TIP111 Silicon NPN Darlington Power Transistor
TIP112 Silicon NPN Darlington Power Transistor
TIP116 PNP Epitaxial Silicon Darlington Transistors
TIP117 PNP Epitaxial Silicon Darlington Transistors

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • High DC Current Gain : hFE=1000 @ VCE=4.0V, IC=1.0A(Min.) • Low Collector-Emitter Saturation Voltage • Complementary to TIP110/111/112 • Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating •MaMxiomisuurme SReantsiitnivgitsy Level 1 Symbol Rating VCEO Collector-Emitter Voltage TIP115 TIP116 TIP117 Rating 60 80 100 Unit V VCBO Collector-Base Voltage TIP115 TIP116 TIP117 60 80 100 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current (DC) 2.0 A ICP Collector Current (Pulse) 4.