TIP115 Datasheet

The TIP115 is a PNP Epitaxial Silicon Darlington Transistor.

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Part NumberTIP115
ManufacturerFairchild Semiconductor
Overview TIP115 / TIP117 — PNP Epitaxial Silicon Darlington Transistor November 2014 TIP115 / TIP117 PNP Epitaxial Silicon Darlington Transistor Features • Monolithic Construction with Built-in Base-Emitter.
* Monolithic Construction with Built-in Base-Emitter Shunt Resistors
* High DC Current Gain: hFE = 1000 @ VCE = -4 V, IC = -1 A (Minimum)
* Low Collector-Emitter Saturation Voltage
* Industrial Use
* Complementary to TIP110 / TIP111 / TIP112 Equivalent Circuit C B 1 TO-220 1.Base 2.Collector 3.Em.
Part NumberTIP115
DescriptionSilicon PNP Transistor
Manufactureronsemi
Overview Plastic Medium-Power Complementary Silicon Transistors TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) Designed for general−purpose amplifier and low−speed switching applications. Features .
* High DC Current Gain
* hFE = 2500 (Typ) @ IC = 1.0 Adc
* Collector
*Emitter Sustaining Voltage
* @ 30 mAdc VCEO(sus) = 60 Vdc (Min)
* TIP110, TIP115 = 80 Vdc (Min)
* TIP111, TIP116 = 100 Vdc (Min)
* TIP112, TIP117
* Low Collector
*Emitter Saturation Voltage
* VCE(sat) = 2.5 Vdc (Max) @ IC = 2.0 Adc .
Part NumberTIP115
DescriptionSilicon Power darlington Complementary transistors
ManufacturerCentral Semiconductor
Overview 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 w. .
Part NumberTIP115
DescriptionDarlington Transistors
ManufacturerMulticomp
Overview TIP110, TIP115 Darlington Transistors Features: Designed for general-purpose amplifier and low speed switching applications. • Collector-emitter sustaining voltage-VCEO (sus) = 60V (Minimum) - TIP110,. Designed for general-purpose amplifier and low speed switching applications.
* Collector-emitter sustaining voltage-VCEO (sus) = 60V (Minimum) - TIP110, TIP115.
* Collector-emitter saturation voltage-VCE (sat) = 2.5V (Maximum) at IC = 2.0A.
* Monolithic construction with built-in-base-emitter shunt.

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