Galaxy Century Microelectronics TIP112
NPN Epitaxial Silicon Darlington Transistor
| Part No. | TIP112 |
|---|---|
| Datasheet | TIP112 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | NPN Epitaxial Silicon Darlington Transistor |
| Buy | Stock & Price |
FEATURES
● Monolithic Construction With Built in Base -Emitter Shunt Resistors.● Complementary to TIP117. Pb Lead-free
● High DC Current Gain:hFE=1000@VCE=4V,IC=1A.
● Low Collector-Emitter Saturation Voltage.
● Industrial Use. TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO VEBO IC IB PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Crrent Collector Dissipation Junction and Storage Temperature Ta=25℃ TC=25℃ 100 V 5V 2 A 4 50 mA 2 W 50 -65 to +150 ℃ X020 Rev.A 1 Production specification NPN Epitaxial Silicon Darlington Transisor TIP112
ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-emitter Sustaining
