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TIP112

Manufacturer: Galaxy Microelectronics
TIP112 datasheet preview

Datasheet Details

Part number TIP112
Datasheet TIP112-GME.pdf
File Size 205.21 KB
Manufacturer Galaxy Microelectronics
Description NPN Epitaxial Silicon Darlington Transistor
TIP112 page 2 TIP112 page 3

TIP112 Overview

Production specification NPN Epitaxial Silicon Darlington Transisor TIP112.

TIP112 Key Features

  • Monolithic Construction With Built in Base -Emitter Shunt Resistors
  • plementary to TIP117
  • High DC Current Gain:hFE=1000@VCE=4V,IC=1A
  • Low Collector-Emitter Saturation Voltage
  • Industrial Use
  • 65 to +150 ℃

TIP112 from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
INCHANGE Logo TIP112 NPN Transistor INCHANGE
RECTRON Logo TIP112 Power Transistors RECTRON
MCC Logo TIP112 Silicon NPN Darlington Power Transistor MCC
Fairchild Semiconductor Logo TIP112 NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
STMicroelectronics Logo TIP112 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics
Galaxy Microelectronics logo - Manufacturer

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