TIP112 Description
Production specification NPN Epitaxial Silicon Darlington Transisor TIP112.
TIP112 Key Features
- Monolithic Construction With Built in Base -Emitter Shunt Resistors
- plementary to TIP117
- High DC Current Gain:hFE=1000@VCE=4V,IC=1A
- Low Collector-Emitter Saturation Voltage
- Industrial Use
- 65 to +150 ℃