TIP112
FEATURES
- Monolithic Construction With Built in Base -Emitter Shunt Resistors.
- plementary to TIP117.
Pb
Lead-free
- High DC Current Gain:h FE=1000@VCE=4V,IC=1A.
- Low Collector-Emitter Saturation Voltage.
- Industrial Use.
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VCBO
Collector-Base Voltage
100 V
VCEO VEBO IC IB PC Tj,Tstg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Pulse
Base Crrent
Collector Dissipation Junction and Storage Temperature
Ta=25℃ TC=25℃
100 V
5V
2 A
50 m A
2 W
-65 to +150 ℃
X020 Rev.A
.gmesemi.
Production specification
NPN Epitaxial Silicon Darlington Transisor
ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter
Symbol Test conditions MIN TYP MAX...
