TIP127
FEATURES
High DC Current Gain : h FE=1000(Min.) at VCE=-3V, IC=-3A. High Collector Breakdown Voltage : VCEO=-120V(Min.)
EPITAXIAL PLANAR PNP TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage
VCBO VCEO
Emitter-Base Voltage
VEB0
Collector Current
DC Pules
IC ICP
Base Current Collector Power Dissipation
(Tc=25 )
IB PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING -120 -120 -5 -5 -8 -0.12
150 -55 150
UNIT V V V
EQUIVALENT CIRCUIT
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
ICBO
VCB=-100V, IE=0
Emitter Cut-off Current
IEBO
VEB=-5V, IC=0
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10m A, IB=0
DC Current Gain h FE(1) h FE(2)
VCE=-3V, IC=-0.5A VCE=-3V, IC=-3A
Collector-Emitter Saturation...
