Datasheet4U Logo Datasheet4U.com

TIP127G - NPN Transistor

This page provides the datasheet information for the TIP127G, a member of the TIP121 NPN Transistor family.

Features

  • High DC Current Gain.
  • hFE = 2500 (Typ) @ IC = 4.0 Adc.
  • Collector.
  • Emitter Sustaining Voltage.
  • @ 100 mAdc VCEO(sus) = 60 Vdc (Min).
  • TIP120, TIP125 = 80 Vdc (Min).
  • TIP121, TIP126 = 100 Vdc (Min).
  • TIP122, TIP127.
  • Low Collector.
  • Emitter Saturation Voltage.
  • VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 4.0 Vdc (Max) @ IC = 5.0 Adc.
  • Monolithic Construction with Built.
  • In Base.
  • Emitter Shu.

📥 Download Datasheet

Datasheet preview – TIP127G

Datasheet Details

Part number TIP127G
Manufacturer ON Semiconductor
File Size 297.68 KB
Description NPN Transistor
Datasheet download datasheet TIP127G Datasheet
Additional preview pages of the TIP127G datasheet.

📁 Similar Datasheet

  • TIP127 - Darlington PNP Power Transistors (TAITRON)
  • TIP127 - PNP Transistor (SemiHow)
  • TIP127 - Silicon PNP Darlington Power Transistors (MCC)
  • TIP127 - Silicon PNP Darlington Power Transistors (SavantIC)
  • TIP127 - Power Transistors (RECTRON)
  • TIP127 - PNP Transistor (WEITRON)
  • TIP127 - PNP PLASTIC POWER TRANSISTORS (CDIL)
  • TIP127 - PNP Epitaxial Darlington Transistor (Fairchild Semiconductor)
  • TIP127 - DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS (Motorola)
  • TIP127 - EPITAXIAL PLANAR PNP TRANSISTOR (KEC)
Other Datasheets by ON Semiconductor
  • TIP127 - Plastic Medium-Power Complementary Silicon Transistors
  • TIP120 - Plastic Medium-Power Complementary Silicon Transistors
  • TIP120G - NPN Transistor
  • TIP121 - Plastic Medium-Power Complementary Silicon Transistors
  • TIP121G - NPN Transistor
  • TIP122 - Plastic Medium-Power Complementary Silicon Transistors
  • TIP122G - NPN Transistor
  • TIP125 - Plastic Medium-Power Complementary Silicon Transistors

Full PDF Text Transcription

Click to expand full text
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 60 Vdc (Min) − TIP120, TIP125 = 80 Vdc (Min) − TIP121, TIP126 = 100 Vdc (Min) − TIP122, TIP127 • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 4.0 Vdc (Max) @ IC = 5.0 Adc • Monolithic Construction with Built−In Base−Emitter Shunt Resistors • Pb−Free Packages are Available* www.onsemi.
Published: |