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TIP121G - NPN Transistor

This page provides the datasheet information for the TIP121G, a member of the TIP121 NPN Transistor family.

Datasheet Summary

Features

  • High DC Current Gain.
  • hFE = 2500 (Typ) @ IC = 4.0 Adc.
  • Collector.
  • Emitter Sustaining Voltage.
  • @ 100 mAdc VCEO(sus) = 60 Vdc (Min).
  • TIP120, TIP125 = 80 Vdc (Min).
  • TIP121, TIP126 = 100 Vdc (Min).
  • TIP122, TIP127.
  • Low Collector.
  • Emitter Saturation Voltage.
  • VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 4.0 Vdc (Max) @ IC = 5.0 Adc.
  • Monolithic Construction with Built.
  • In Base.
  • Emitter Shu.

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Datasheet preview – TIP121G

Datasheet Details

Part number TIP121G
Manufacturer ON Semiconductor
File Size 297.68 KB
Description NPN Transistor
Datasheet download datasheet TIP121G Datasheet
Additional preview pages of the TIP121G datasheet.

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Other Datasheets by ON Semiconductor
  • TIP121 - Plastic Medium-Power Complementary Silicon Transistors
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  • TIP120G - NPN Transistor
  • TIP122 - Plastic Medium-Power Complementary Silicon Transistors
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  • TIP125 - Plastic Medium-Power Complementary Silicon Transistors
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  • TIP126 - Plastic Medium-Power Complementary Silicon Transistors

Full PDF Text Transcription

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TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 60 Vdc (Min) − TIP120, TIP125 = 80 Vdc (Min) − TIP121, TIP126 = 100 Vdc (Min) − TIP122, TIP127 • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 4.0 Vdc (Max) @ IC = 5.0 Adc • Monolithic Construction with Built−In Base−Emitter Shunt Resistors • Pb−Free Packages are Available* www.onsemi.
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