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TIP120 - NPN Transistor

Description

High DC Current Gain- : hFE = 1000(Min)@ IC= 3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 3A = 4.0V(Max)@ IC= 5A Complement to Type TIP125 Minimum Lot-to-Lot variations for robust device

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isc Silicon NPN Darlington Power Transistor TIP120 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 3A = 4.0V(Max)@ IC= 5A ·Complement to Type TIP125 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
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