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TIP106 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Darlington Power Transistor TIP106.

General Description

·High DC Current Gain- : hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -3A = -2.5V(Max)@ IC= -8A ·Complement to Type TIP101 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak -15 A IB Base Current- Continuous Collector Power Dissipation PC @TC=25℃ Collector Power Dissipation @Ta=25℃ Tj Junction Temperature -1 A 80 W 2 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.56 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website: www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA, IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A ,IB= -6mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -8A ,IB= -80mA VBE(on) Base-Emitter On Voltage IC= -8A ;

VCE= -4V ICBO Collector Cutoff Current VCB= -80V, IE=0 ICEO Collector Cutoff Current VCE= -40V, IB=0 IEBO Emitter Cutoff Current VEB= -5V;

IC=0 hFE-1 DC Current Gain IC= -3A;

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