Datasheet Summary
isc Silicon PNP Darlington Power Transistor
DESCRIPTION
- High DC Current Gain-
: hFE = 1000(Min)@ IC= -3A
- Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -80V(Min)
- Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -2.0V(Max)@ IC= -3A = -4.0V(Max)@ IC= -5A
- plement to Type TIP121
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for general purpose amplifier and low speed switching...
