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TK17J65U N-Channel MOSFET

TK17J65U Description

iscN-Channel MOSFET Transistor *.

TK17J65U Features

* Low drain-source on-resistance: RDS(on) = 0.26Ω(MAX)
* Low leakage current: IDSS = 100 µA (max) (VDS = 650 V)
* Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

TK17J65U Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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Datasheet Details

Part number
TK17J65U
Manufacturer
INCHANGE
File Size
277.45 KB
Datasheet
TK17J65U-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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