TK100A06N1 Datasheet, Mosfet, INCHANGE

TK100A06N1 Features

• Mosfet
• Low drain-source on-resistance: RDS(ON) = 2.7mΩ (typ.) (VGS = 10 V)
• Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)
• 100% avalanche tested

PDF File Details

Part number:

TK100A06N1

Manufacturer:

INCHANGE

File Size:

247.63kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

TK100A06N1 Application

• Applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipmen

TAGS

TK100A06N1

INCHANGE

📁 Related Datasheet

TK100A06N1 - MOSFETs (Toshiba Semiconductor)
TK100A06N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK100A06N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-sour.

TK100A08N1 - MOSFETs (Toshiba Semiconductor)
TK100A08N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK100A08N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-sour.

TK100A10N1 - Silicon N-Channel MOSFET (Toshiba)
MOSFETs Silicon N-channel MOS (U-MOS-H) TK100A10N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS.

TK100A10N1 - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK100A10N1，ITK100A10N1 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 3.8mΩ (VGS = 10 V.

TK100E06N1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK100E06N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK100E06N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-sour.

TK100E06N1 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK100E06N1，ITK100E06N1 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤2.3mΩ. (VGS = 10 V.

TK100E08N1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
MOSFETs Silicon N-channel MOS (U-MOS-H) TK100E08N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS.

TK100E08N1 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK100E08N1，ITK100E08N1 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤3.2mΩ. (VGS = 10 V.

TK100E10N1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK100E10N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK100E10N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-sour.

TK100E10N1 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK100E10N1，ITK100E10N1 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤3.4mΩ. (VGS = 10 V.