TK100A06N1 - N-Channel MOSFET
TK100A06N1 Features
* Low drain-source on-resistance: RDS(ON) = 2.7mΩ (typ.) (VGS = 10 V)
* Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Switching Voltage Regulato
