TK100E10N1

Silicon N-Channel MOSFET

Toshiba Semiconductor

TK100E10N1 Features

* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolute Maximum

TK100E10N1 Datasheet (247.03 KB)

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Part number:

TK100E10N1

Manufacturer:

Toshiba ↗ Semiconductor

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247.03 KB

Description:

Silicon n-channel mosfet.

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TK100E10N1 Silicon N-Channel MOSFET Toshiba Semiconductor

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TK100E10N1 Features

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