TK100E10N1 Datasheet, Mosfet, Toshiba Semiconductor

TK100E10N1 Features

• Mosfet (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V,

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Part number:

TK100E10N1

Manufacturer:

Toshiba ↗ Semiconductor

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247.03kb

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📄 Datasheet

Description:

Silicon n-channel mosfet.

TK100E10N1 Application

• Applications
• Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.8 mΩ (typ.) (VGS = 10 V) Lo

TAGS

TK100E10N1

Toshiba Semiconductor

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