Datasheet4U Logo Datasheet4U.com

TK100F06K3 Datasheet - Toshiba

TK100F06K3 Silicon N-Channel MOSFET

TK100F06K3 Features

* (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 4.0 mΩ (typ.) (VGS = 10 V) (3) High forward transfer admittance: |Yfs| = 174 S (typ.) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (5) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Intern

TK100F06K3_Toshiba.pdf

Preview of TK100F06K3 PDF
TK100F06K3 Datasheet Preview Page 2 TK100F06K3 Datasheet Preview Page 3

Datasheet Details

Part number:

TK100F06K3

Manufacturer:

Toshiba ↗

File Size:

380.48 KB

Description:

Silicon n-channel mosfet.

TK100F06K3 Distributor

📁 Related Datasheet

TK100F04K3 Silicon N-Channel MOSFET (Toshiba)

TK100F04K3L MOSFETs (Toshiba Semiconductor)

TK100A06N1 MOSFETs (Toshiba Semiconductor)

TK100A06N1 N-Channel MOSFET (INCHANGE)

TK100A08N1 MOSFETs (Toshiba Semiconductor)

TK100A10N1 Silicon N-Channel MOSFET (Toshiba)

TK100A10N1 N-Channel MOSFET (INCHANGE)

TK100E06N1 Silicon N-Channel MOSFET (Toshiba Semiconductor)

TAGS

TK100F06K3 TK100F06K3 Silicon N-Channel MOSFET Toshiba