* (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 4.0 mΩ (typ.) (VGS = 10 V) (3) High forward transfer admittance: |Yfs| = 174 S (typ.) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (5) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Intern
TK100F06K3 Datasheet (380.48 KB)
TK100F06K3
380.48 KB
Silicon n-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS) TK100F06K3 1. Applications Switching Voltage Regulators DC-DC Converters Motor Dr.
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