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TK10A60D - N-Channel MOSFET

TK10A60D Description

TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A60D Switching Regulator Applications Unit: mm * * .

TK10A60D Features

* t used in the aerospace industry, medical equi

TK10A60D Applications

* Unit: mm
* Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ. ) High forward transfer admittance: |Yfs| = 6.0 S (typ. ) Low leakage current: IDSS = 10 μA (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (T

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N-Channel MOSFET Toshiba
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