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TK10A80W Datasheet - Toshiba

TK10A80W Silicon N-Channel MOSFET

TK10A80W Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.46 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 0.45mA) 3. Packaging and Internal Circuit TK10A80W 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute

TK10A80W Datasheet (412.43 KB)

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Datasheet Details

Part number:

TK10A80W

Manufacturer:

Toshiba ↗

File Size:

412.43 KB

Description:

Silicon n-channel mosfet.

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TK10A80W Silicon N-Channel MOSFET Toshiba

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