Datasheet Specifications
- Part number
- TK10A80E
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 219.34 KB
- Datasheet
- TK10A80E-ToshibaSemiconductor.pdf
- Description
- Silicon N-Channel MOSFET
Description
TK10A80E MOSFETs Silicon N-Channel MOS (π-MOS) TK10A80E 1.Applications * Switching Voltage Regulators 2..
Features
* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ. ) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS Start of commercial production 1 2013-10TK10A80E Distributors
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