Part number:
TK10A80E
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
219.34 KB
Description:
Silicon n-channel mosfet.
TK10A80E-ToshibaSemiconductor.pdf
Datasheet Details
TK10A80E-ToshibaSemiconductor.pdf
Datasheet Details
Part number:
TK10A80E
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
219.34 KB
Description:
Silicon n-channel mosfet.
TK10A80E, Silicon N-Channel MOSFET
TK10A80E Features
* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ.) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS Start of commercial production 1 2013-10
📁 Related Datasheet
📌 All Tags