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TK10A80E Datasheet - Toshiba Semiconductor

TK10A80E Silicon N-Channel MOSFET

TK10A80E Features

* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ.) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS Start of commercial production 1 2013-10

TK10A80E-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TK10A80E

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

219.34 KB

Description:

Silicon n-channel mosfet.

TK10A80E Distributor

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TK10A80E TK10A80E Silicon N-Channel MOSFET Toshiba Semiconductor