Part number:
TK10A80E
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
219.34 KB
Description:
Silicon n-channel mosfet.
TK10A80E Datasheet (219.34 KB)
Datasheet Details
TK10A80E Features
* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ.) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS Start of commercial production 1 2013-10
TK10A80E Datasheet (219.34 KB)
Datasheet Details
TK10A80E
Toshiba ↗ Semiconductor
219.34 KB
Silicon n-channel mosfet.
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