TK10A60W5 - Silicon N-Channel MOSFET
TK10A60W5 Features
* (1) (2) (3) (4) Fast reverse recovery time: trr = 85 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.35 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1: Gate 2
