Datasheet Specifications
- Part number
- TK100A06N1
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 230.12 KB
- Datasheet
- TK100A06N1-ToshibaSemiconductor.pdf
- Description
- MOSFETs
Description
TK100A06N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK100A06N1 1.Applications * Switching Voltage Regulators 2..
Features
* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum RatingsTK100A06N1 Distributors
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