TK100A06N1 Datasheet, Mosfets, Toshiba Semiconductor

TK100A06N1 Features

• Mosfets (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, I

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Part number:

TK100A06N1

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Toshiba ↗ Semiconductor

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230.12kb

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📄 Datasheet

Description:

Mosfets.

TK100A06N1 Application

• Applications
• Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = 10 V) Lo

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TK100A06N1

Toshiba Semiconductor

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