TK100A06N1 - MOSFETs

Toshiba Semiconductor

Datasheet Details

Part number	TK100A06N1
Manufacturer	Toshiba ↗ Semiconductor
File Size	230.12 KB
Description	MOSFETs
Datasheet	TK100A06N1-ToshibaSemiconductor.pdf

(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalan.

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Published: Sep 11, 2014 |