TK100A06N1 Datasheet - Toshiba Semiconductor

TK100A06N1, MOSFETs

TK100A06N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK100A06N1 1.Applications * Switching Voltage Regulators 2..

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TK100A06N1-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TK100A06N1

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

230.12 KB

Description:

MOSFETs

Features

* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings

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