TK100E08N1 - Silicon N-Channel MOSFET
TK100E08N1 Features
* (1) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TK100E08N1 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolu
