* (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK100S04N1L DPAK+ 1: Gate 2: Drain (heatsin
TK100S04N1L Datasheet (279.82 KB)
TK100S04N1L
Toshiba ↗ Semiconductor
279.82 KB
Silicon n-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS-H) TK100S04N1L 1. Applications Automotive Switching Voltage Regulators Motor Drive.
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