TK100S04N1L - Silicon N-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	TK100S04N1L
Manufacturer	Toshiba ↗ Semiconductor
File Size	279.82 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK100S04N1L-ToshibaSemiconductor.pdf

(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ. ) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK100S04N1L DPAK+ 1: Gate 2: Drain (heatsink) 3: Source ©2016-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2013-01 2020-06-24 Rev.7.0 TK100S04N1L 4. Absolute Maximum Ratings (Note) (Ta = 25 unles.

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Published: Sep 5, 2014 |