Datasheet4U Logo Datasheet4U.com

TK100F04K3L Datasheet - Toshiba Semiconductor

TK100F04K3L MOSFETs

TK100F04K3L Features

* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220SM(W) 4. Absolute Maxim

TK100F04K3L Datasheet (279.78 KB)

Preview of TK100F04K3L PDF
TK100F04K3L Datasheet Preview Page 2 TK100F04K3L Datasheet Preview Page 3

Datasheet Details

Part number:

TK100F04K3L

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

279.78 KB

Description:

Mosfets.

📁 Related Datasheet

TK100F04K3 Silicon N-Channel MOSFET (Toshiba)

TK100F06K3 Silicon N-Channel MOSFET (Toshiba)

TK100A06N1 MOSFETs (Toshiba Semiconductor)

TK100A06N1 N-Channel MOSFET (INCHANGE)

TK100A08N1 MOSFETs (Toshiba Semiconductor)

TK100A10N1 Silicon N-Channel MOSFET (Toshiba)

TK100A10N1 N-Channel MOSFET (INCHANGE)

TK100E06N1 Silicon N-Channel MOSFET (Toshiba Semiconductor)

TAGS

TK100F04K3L MOSFETs Toshiba Semiconductor

TK100F04K3L Distributor