Part number:
TK100A10N1
Manufacturer:
File Size:
234.01 KB
Description:
Silicon n-channel mosfet.
TK100A10N1 Datasheet (234.01 KB)
* (1) Low drain-source on-resistance: RDS(ON) = 3.1 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TK100A10N1 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maxi
TK100A10N1 Datasheet (234.01 KB)
TK100A10N1
234.01 KB
Silicon n-channel mosfet.
📁 Related Datasheet
TK100A10N1 - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
TK100A10N1，ITK100A10N1
·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 3.8mΩ (VGS = 10 V.
TK100A06N1 - MOSFETs
(Toshiba Semiconductor)
TK100A06N1
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK100A06N1
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-sour.
TK100A06N1 - N-Channel MOSFET
(INCHANGE)
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor TK100A06N1，ITK100A06N1
·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 2.7mΩ (typ.) (VGS .
TK100A08N1 - MOSFETs
(Toshiba Semiconductor)
TK100A08N1
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK100A08N1
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-sour.
TK100E06N1 - Silicon N-Channel MOSFET
(Toshiba Semiconductor)
TK100E06N1
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK100E06N1
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-sour.
TK100E06N1 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
TK100E06N1，ITK100E06N1
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤2.3mΩ. (VGS = 10 V.
TK100E08N1 - Silicon N-Channel MOSFET
(Toshiba Semiconductor)
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK100E08N1
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS.
TK100E08N1 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
TK100E08N1，ITK100E08N1
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤3.2mΩ. (VGS = 10 V.
