TK100A10N1 Datasheet, Mosfet, Toshiba

TK100A10N1 Features

• Mosfet (1) Low drain-source on-resistance: RDS(ON) = 3.1 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V,

PDF File Details

Part number:

TK100A10N1

Manufacturer:

Toshiba ↗

File Size:

234.01kb

Download:

📄 Datasheet

Description:

Silicon n-channel mosfet.

TK100A10N1 Application

• Applications
• Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 3.1 mΩ (typ.) (VGS = 10 V) (2) Low lea

TAGS

TK100A10N1

Toshiba

📁 Related Datasheet

TK100A10N1 - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK100A10N1，ITK100A10N1 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 3.8mΩ (VGS = 10 V.

TK100A06N1 - MOSFETs (Toshiba Semiconductor)
TK100A06N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK100A06N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-sour.

TK100A06N1 - N-Channel MOSFET (INCHANGE)
INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK100A06N1，ITK100A06N1 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 2.7mΩ (typ.) (VGS .

TK100A08N1 - MOSFETs (Toshiba Semiconductor)
TK100A08N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK100A08N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-sour.

TK100E06N1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK100E06N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK100E06N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-sour.

TK100E06N1 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK100E06N1，ITK100E06N1 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤2.3mΩ. (VGS = 10 V.

TK100E08N1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
MOSFETs Silicon N-channel MOS (U-MOS-H) TK100E08N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS.

TK100E08N1 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK100E08N1，ITK100E08N1 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤3.2mΩ. (VGS = 10 V.

TK100E10N1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK100E10N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK100E10N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-sour.

TK100E10N1 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK100E10N1，ITK100E10N1 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤3.4mΩ. (VGS = 10 V.