Datasheet4U Logo Datasheet4U.com

TK100A10N1 Datasheet - Toshiba

Silicon N-Channel MOSFET

TK100A10N1 Features

* (1) Low drain-source on-resistance: RDS(ON) = 3.1 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TK100A10N1 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maxi

TK100A10N1 Datasheet (234.01 KB)

Preview of TK100A10N1 PDF

Datasheet Details

Part number:

TK100A10N1

Manufacturer:

Toshiba ↗

File Size:

234.01 KB

Description:

Silicon n-channel mosfet.

📁 Related Datasheet

TK100A10N1 N-Channel MOSFET (INCHANGE)

TK100A06N1 MOSFETs (Toshiba Semiconductor)

TK100A06N1 N-Channel MOSFET (INCHANGE)

TK100A08N1 MOSFETs (Toshiba Semiconductor)

TK100E06N1 Silicon N-Channel MOSFET (Toshiba Semiconductor)

TK100E06N1 N-Channel MOSFET (INCHANGE)

TK100E08N1 Silicon N-Channel MOSFET (Toshiba Semiconductor)

TK100E08N1 N-Channel MOSFET (INCHANGE)

TK100E10N1 Silicon N-Channel MOSFET (Toshiba Semiconductor)

TK100E10N1 N-Channel MOSFET (INCHANGE)

TAGS

TK100A10N1 Silicon N-Channel MOSFET Toshiba

Image Gallery

TK100A10N1 Datasheet Preview Page 2 TK100A10N1 Datasheet Preview Page 3

TK100A10N1 Distributor