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TK100L60W Datasheet - Toshiba

TK100L60W Silicon N-Channel MOSFET

TK100L60W Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.015 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 5 mA) 3. Packaging and Internal Circuit TK100L60W 1: Gate 2: Drain (Heatsink) 3: Source TO-3P(L)

TK100L60W_Toshiba.pdf

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Datasheet Details

Part number:

TK100L60W

Manufacturer:

Toshiba ↗

File Size:

246.01 KB

Description:

Silicon n-channel mosfet.

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TAGS

TK100L60W TK100L60W Silicon N-Channel MOSFET Toshiba

TK100L60W Distributor