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TK10A50D - Silicon N-Channel MOSFET

TK10A50D Description

TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A50D Switching Regulator Applications * Low drain-source ON-.

TK10A50D Applications

* Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ. )
* High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ. )
* Low leakage current: IDSS = 10 μA (max) (VDS = 500 V)
* Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratin

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Silicon N-Channel MOSFET Toshiba
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