TK10A60D5 - Silicon N-Channel MOSFET
TK10A60D5 Features
* (1) Fast reverse recovery time: trrf = 50 ns (typ.), trr = 90 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.8 Ω (typ.) (3) High forward transfer admittance: |Yfs| = 6.0 S (typ.) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) (5) Enhancement mode: Vth = 2.5 to 4.5 V (VDS = 10 V
