Datasheet Specifications
- Part number
- TK10A60E
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 234.76 KB
- Datasheet
- TK10A60E-ToshibaSemiconductor.pdf
- Description
- MOSFETs
Description
TK10A60E MOSFETs Silicon N-Channel MOS (π-MOS) TK10A60E 1.Applications * Switching Voltage Regulators 2..
Features
* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 1 2013-02-13 Rev.2.0 TK10A6TK10A60E Distributors
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