TK10A60E Datasheet - Toshiba Semiconductor

TK10A60E, MOSFETs

TK10A60E MOSFETs Silicon N-Channel MOS (π-MOS) TK10A60E 1.Applications * Switching Voltage Regulators 2..

datasheet Preview Page 1 from Datasheet4u.com

TK10A60E-ToshibaSemiconductor.pdf

TK10A60E Datasheet Preview — Preview of TK10A60E PDF

Datasheet Details

Part number:

TK10A60E

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

234.76 KB

Description:

MOSFETs

Features

* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 1 2013-02-13 Rev.2.0 TK10A6

TK10A60E Distributors

📁 Related Datasheet

TK10A60D TK10A60D5 TK10A60DR TK10A TK10A50D TK10A50W

📌 All Tags

TK10A60E MOSFETs Toshiba Semiconductor

Toshiba Semiconductor TK10A60E-like datasheet