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TK10A60E - MOSFETs

TK10A60E Description

TK10A60E MOSFETs Silicon N-Channel MOS (π-MOS) TK10A60E 1.Applications * Switching Voltage Regulators 2..

TK10A60E Features

* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 1 2013-02-13 Rev.2.0 TK10A6

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MOSFETs Toshiba Semiconductor
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