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TK10A60E Datasheet - Toshiba Semiconductor

TK10A60E MOSFETs

TK10A60E Features

* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 1 2013-02-13 Rev.2.0 TK10A6

TK10A60E-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TK10A60E

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

234.76 KB

Description:

Mosfets.

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