TK10A60E Datasheet, Mosfets, Toshiba Semiconductor

TK10A60E Features

• Mosfets (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V,

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Part number:

TK10A60E

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

234.76kb

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📄 Datasheet

Description:

Mosfets.

TK10A60E Application

• Applications
• Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.) (VGS = 10 V) Lo

TAGS

TK10A60E

Toshiba Semiconductor

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