Part number:
TK10A60E
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
234.76 KB
Description:
Mosfets.
TK10A60E Datasheet (234.76 KB)
* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 1 2013-02-13 Rev.2.0 TK10A6
TK10A60E Datasheet (234.76 KB)
TK10A60E
Toshiba ↗ Semiconductor
234.76 KB
Mosfets.
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