TK10A60D - N-Channel MOSFET
TK10A60D Features
* Low drain-source on-resistance: RDS(ON) = 0.58Ω (typ.)
* Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Switching Voltage Regulators
* ABSO
