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TK39N60W N-Channel MOSFET

TK39N60W Description

isc N-Channel MOSFET Transistor *.

TK39N60W Features

* With TO-247 packaging
* With low gate drive requirements
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

TK39N60W Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 38.8 IDM Drain Current-Single Pulsed 155 PD Total Dissipation 270 Tj Operating Junction Temperature -5

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Datasheet Details

Part number
TK39N60W
Manufacturer
INCHANGE
File Size
262.73 KB
Datasheet
TK39N60W-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE TK39N60W-like datasheet