TK39N60W5 - Silicon N-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	TK39N60W5
Manufacturer	Toshiba Semiconductor
File Size	245.58 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK39N60W5-ToshibaSemiconductor.pdf

(1) (2) (3) (4) Fast reverse recovery time: trr = 150 ns (typ. ) Low drain-source on-resistance: RDS(ON) = 0.062 Ω (typ. ) by using Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1.9 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-247 Start of commercial production 1 2013-10 2014-02-25 Rev.2.0 TK39N60W5 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics.

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Published: Sep 20, 2014 |