Datasheet4U Logo Datasheet4U.com

TK30A06J3A MOSFET

TK30A06J3A Description

TK30A06J3A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U *MOSⅢ) TK30A06J3A Switching Regulator Applications z z z z Low drain-.

TK30A06J3A Applications

* z z z z Low drain-source ON-resistance: RDS (ON) = 19 mΩ (typ. ) High forward transfer admittance: |Yfs| = 34 S (typ. ) Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain

📥 Download Datasheet

Preview of TK30A06J3A PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • TK31A60W - Silicon N-Channel MOSFET (Toshiba)
  • TK31E60W - Silicon N-Channel MOSFET (Toshiba)
  • TK31E60X - Silicon N-Channel MOSFET (Toshiba)
  • TK31J60W - Silicon N-Channel MOSFET (Toshiba)
  • TK31N60W - Silicon N-Channel MOSFET (Toshiba)
  • TK31N60X - Silicon N-Channel MOSFET (Toshiba)
  • TK31V60W5 - Silicon N-Channel MOSFET (Toshiba)
  • TK31V60X - Silicon N-Channel MOSFET (Toshiba)

📌 All Tags

MOSFET Toshiba Semiconductor
Toshiba Semiconductor TK30A06J3A-like datasheet