Datasheet Specifications
- Part number
- TK30A06J3A
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 193.00 KB
- Datasheet
- TK30A06J3A-ToshibaSemiconductor.pdf
- Description
- MOSFET
Description
TK30A06J3A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U *MOSⅢ) TK30A06J3A Switching Regulator Applications z z z z Low drain-.
Applications
* z z z z Low drain-source ON-resistance: RDS (ON) = 19 mΩ (typ. ) High forward transfer admittance: |Yfs| = 34 S (typ. ) Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics DrainTK30A06J3A Distributors
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