TK30A06J3A Datasheet - Toshiba Semiconductor

TK30A06J3A, MOSFET

TK30A06J3A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U *MOSⅢ) TK30A06J3A Switching Regulator

Applications

* z z z z Low drain-source ON-resistance: RDS (ON) = 19 mΩ (typ.
) High forward transfer admittance: |Yfs| = 34 S (typ.
) Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain

TK30A06J3A-ToshibaSemiconductor.pdf