Datasheet4U.com

TK31V60W5 - Silicon N-Channel MOSFET

Toshiba

📥 Download Datasheet

TK31V60W5 Datasheet Preview — Preview of TK31V60W5 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	TK31V60W5
Manufacturer	Toshiba ↗
File Size	279.63 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK31V60W5-Toshiba.pdf

TK31V60W5 Product details

Features

(1) Fast reverse recovery time: trr = 135 ns (typ. ) (2) Low drain-source on-resistance: RDS(ON) = 0.087 Ω(typ. ) (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1.5 mA) 3. Packaging and Internal Circuit TK31V60W5 DFN8x8 1: Gate 2: Source1 3,4: Source2 5: Drain (Heatsink) Notice: Please use the source1 pin for gate input signal return. Make sure that the main current flows into the source2 pins. 4. Absolute Maximum Ratings (Note) (Ta = 25  unless ot.

📁 TK31V60W5 Similar Datasheet

TK31V60W - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK31J60W5 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK31N60W5 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK31N60X - N-Channel MOSFET (INCHANGE)
TK30A06J3A - MOSFET (Toshiba Semiconductor)
TK30A06N1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK30E06N1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK30J25D - Silicon N-Channel MOSFET (Toshiba Semiconductor)

Other Datasheets by Toshiba

TK31V60X - Silicon N-Channel MOSFET
TK31A60W - Silicon N-Channel MOSFET
TK31E60W - Silicon N-Channel MOSFET
TK31E60X - Silicon N-Channel MOSFET
TK31J60W - Silicon N-Channel MOSFET
TK31N60W - Silicon N-Channel MOSFET

Published: Jan 2, 2024 |