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TK31V60W Datasheet - Toshiba Semiconductor

TK31V60W-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TK31V60W

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

241.00 KB

Description:

Silicon n-channel mosfet.

TK31V60W, Silicon N-Channel MOSFET

TK31V60W Features

* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.078 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.5 mA) 3. Packaging and Internal Circuit 1: Gate 2: Source1 3,4: Source2 5: Drain (Heatsink) Notic

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📌 All Tags

TK31V60W Silicon N-Channel MOSFET Toshiba Semiconductor
Toshiba Semiconductor TK31V60W-like datasheet
TK31J60W5
TK31N60W5
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TK30A06N1
TK30E06N1