TK31V60W Silicon N-Channel MOSFET

Toshiba Semiconductor

Description

TK31V60W MOSFETs Silicon N-Channel MOS (DTMOS) TK31V60W 1.Applications * Switching Voltage Regulators 2..

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Datasheet Specifications

Part number: TK31V60W
Manufacturer: Toshiba ↗ Semiconductor
File Size: 241.00 KB
Datasheet: TK31V60W-ToshibaSemiconductor.pdf
Description: Silicon N-Channel MOSFET

Features

* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.078 Ω (typ. ) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.5 mA) 3. Packaging and Internal Circuit 1: Gate 2: Source1 3,4: Source2 5: Drain (Heatsink) Notic

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TK31V60W Silicon N-Channel MOSFET Toshiba Semiconductor

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