TK30E06N1 - Silicon N-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	TK30E06N1
Manufacturer	Toshiba ↗ Semiconductor
File Size	246.84 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK30E06N1-ToshibaSemiconductor.pdf

(1) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ. ) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit TK30E06N1 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS ±20 Drain current (DC) (Silicon.

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Published: Sep 5, 2014 |