TK30E06N1 Datasheet - Toshiba Semiconductor

TK30E06N1, Silicon N-Channel MOSFET

MOSFETs Silicon N-channel MOS (U-MOS-H) TK30E06N1 1.

Features

* (1) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.
) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit TK30E06N1 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolu

TK30E06N1-ToshibaSemiconductor.pdf