TK30E06N1 Datasheet, mosfet equivalent, Toshiba Semiconductor

TK30E06N1 Features

• Mosfet (1) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V,

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Part number:

TK30E06N1

Manufacturer:

Toshiba (https://www.toshiba.com/) Semiconductor

File Size:

246.84kb

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📄 Datasheet

Description:

Silicon n-channel mosfet.

TK30E06N1 Application

• Applications
• Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V) (2) Low le

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TK30E06N1

Toshiba Semiconductor

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