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TK31J60W

Silicon N-Channel MOSFET

TK31J60W Features

* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.5 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-3P(N) 1 2012-

TK31J60W Datasheet (247.94 KB)

Preview of TK31J60W PDF

Datasheet Details

Part number:

TK31J60W

Manufacturer:

Toshiba ↗

File Size:

247.94 KB

Description:

Silicon n-channel mosfet.

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TK31J60W Silicon N-Channel MOSFET Toshiba

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