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TK31J60W5 Datasheet - Toshiba Semiconductor

TK31J60W5 Silicon N-Channel MOSFET

TK31J60W5 Features

* (1) (2) (3) (4) Fast reverse recovery time: trr = 135 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.082 Ω (typ.) by using Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3.0 to 4.5 V (VDS = 10 V, ID = 1.5 mA) 3. Packaging and Internal Circuit 1: Gate

TK31J60W5-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TK31J60W5

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

242.77 KB

Description:

Silicon n-channel mosfet.

TK31J60W5 Distributor

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TK31J60W5 TK31J60W5 Silicon N-Channel MOSFET Toshiba Semiconductor