TK30A06N1 Silicon N-Channel MOSFET

Toshiba Semiconductor

Description

MOSFETs Silicon N-channel MOS (U-MOS-H) TK30A06N1 1.Applications * Switching Voltage Regulators 2..

📥 Download Datasheet

TK30A06N1 Datasheet Preview — Preview of TK30A06N1 PDF

Datasheet Specifications

Part number: TK30A06N1
Manufacturer: Toshiba ↗ Semiconductor
File Size: 237.15 KB
Datasheet: TK30A06N1-ToshibaSemiconductor.pdf
Description: Silicon N-Channel MOSFET

Features

* (1) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ. ) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit TK30A06N1 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maxim

TK30A06N1 Distributors

📁 Related Datasheet

TK31A60W TK31E60W TK31E60X TK31J60W TK31N60W TK31N60W5

📌 All Tags

TK30A06N1 Silicon N-Channel MOSFET Toshiba Semiconductor

Toshiba Semiconductor TK30A06N1-like datasheet