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TK30J25D Datasheet - Toshiba Semiconductor

TK30J25D - Silicon N-Channel MOSFET

TK30J25D Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.046 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK30J25D 1: Gate (G) 2: Drain (D)(Heatsink) 3: Source (S) TO-3P(N) 4. Absolute

TK30J25D-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TK30J25D

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

231.71 KB

Description:

Silicon n-channel mosfet.

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📌 All Tags

TK30J25D Silicon N-Channel MOSFET Toshiba Semiconductor