TK30J25D Datasheet, MOSFET, Toshiba Semiconductor

TK30J25D Features

• Mosfet (1) Low drain-source on-resistance: RDS(ON) = 0.046 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3

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Part number:

TK30J25D

Manufacturer:

Toshiba ↗ Semiconductor

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231.71kb

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📄 Datasheet

Description:

Silicon n-channel mosfet.

TK30J25D Application

• Applications
• Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.046 Ω (typ.) (2) Low leakage current

TAGS

TK30J25D

Toshiba Semiconductor

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